sod-323 plastic-encapsulate diodes b0520ws/B0530WS/b0540ws schottky barrier diode features z low forward voltage drop z guard ring construction for transient protection z high conductance z also available in lead free version marking: b0520ws: sd B0530WS: c 1 b0540ws: sf maximum ratings @ta =25 / parameter symbol b0520w s B0530WS b0540ws unit peak repetitive peak reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 20 30 40 v rms reverse voltage reverse voltage (dc) v r(rms) 14 21 28 v average rectified output current i o 0.5 a forward current surge peak i fsm 5.5 a power dissipation p d 200 mw thermal resistance junction to ambient r ja / /w junction temperature t j 1 5 / storage temperature t stg - 5 5~+150 / voltage rate of change dv/dt 1000 v/ s electrical characteristics @ta=25 / parameter symbol b0520ws B0530WS b0540ws unit conditions 20 -- -- i r =250 a -- 30 -- i r =500 a minimum reverse b- reakdown voltage v (br) -- -- 40 v i r =20 a v f1 0.3 3 0.36 -- i f =0.1a v f2 0.3 9 0.45 0.510 i f =0.5a forward voltage v f3 -- -- 0.62 v i f =1a i r1 75 -- -- v r =10v reverse current i r2 -- 80 -- a v r =15v i r3 250 100 10 v r =20v i r4 -- 500 -- v r =30v reverse current i r5 -- -- 20 a v r =40v capacitance between terminals c t 170 170 170 pf v r =0,f=1mhz sod-323 dongguan nanjing electronics ltd.,
0 2 5 5 0 7 5 100 125 0 50 100 150 200 250 0.0 0.2 0.4 0.6 0.8 1.0 0.01 0.1 1 10 0 5 10 15 20 25 30 1 10 100 1000 10000 0 5 10 15 20 10 100 1000 forward characteristics reverse characteristics power derating curve power dissipation p d (mw) ambient temperature t a ( ) 300 30 0.03 B0530WS typical characteristics 3 0.3 t a = 1 0 0 t a = 2 5 forward current i f (a) forward voltage v f (v) 3 3000 300 30 t a =100 t a =25 reverse current i r (ua) reverse voltage v r (v) t a =25 f=1mhz capacitance characteristics reverse voltage v r (v) capacitance between terminals c t (pf)
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